產(chǎn)品系列
產(chǎn)品系列
BS108ZL1G
- Manufacturer : ON Semiconductor
Packaging : Tape & Box (TB)
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2V, 2.8V
Rds On (Max) @ Id, Vgs : 8 Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id : 1.5V @ 1mA
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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