產(chǎn)品系列
NTJD4105CT1G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V, 8V
Current - Continuous Drain (Id) @ 25°C : 630mA, 775mA
Rds On (Max) @ Id, Vgs : 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 46pF @ 20V
Power - Max : 270mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : SC-88/SC70-6/SOT-363
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