產(chǎn)品系列
產(chǎn)品系列
NTHD4P02FT1G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 2.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 155 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 6nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 10V
FET Feature : Schottky Diode (Isolated)
Power Dissipation (Max) : 1.1W (Tj)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : ChipFET?
Package / Case : 8-SMD, Flat Lead
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