產(chǎn)品系列
產(chǎn)品系列
NTGS1135PT1G
- Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 8V
Current - Continuous Drain (Id) @ 25°C : 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 4.5V
Rds On (Max) @ Id, Vgs : 31 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id : 850mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 21nC @ 4.5V
Vgs (Max) : ±6V
Input Capacitance (Ciss) (Max) @ Vds : 2200pF @ 6V
Power Dissipation (Max) : 970mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-TSOP
Package / Case : SOT-23-6
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