產(chǎn)品系列
產(chǎn)品系列
NTB125N02RT4
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 24V
Current - Continuous Drain (Id) @ 25°C : 95A (Ta), 120.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3440pF @ 20V
Power Dissipation (Max) : 1.98W (Ta), 113.6W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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