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產(chǎn)品系列
VP2106N3-G
- Manufacturer : Microchip Technology
Packaging : Bulk
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
Power Dissipation (Max) : 1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
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