產(chǎn)品系列
產(chǎn)品系列
HGTG18N120BN
- Manufacturer : ON Semiconductor
Packaging : Tube
Part Status : Not For New Designs
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 54A
Current - Collector Pulsed (Icm) : 165A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 18A
Power - Max : 390W
Switching Energy : 800μJ (on), 1.8mJ (off)
Input Type : Standard
Gate Charge : 165nC
Td (on/off) @ 25°C : 23ns/170ns
Test Condition : 960V, 18A, 3 Ohm, 15V
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
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