產(chǎn)品系列
產(chǎn)品系列
HGTG10N120BND
- Manufacturer : ON Semiconductor
Packaging : Tube
Part Status : Not For New Designs
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 35A
Current - Collector Pulsed (Icm) : 80A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
Power - Max : 298W
Switching Energy : 850μJ (on), 800μJ (off)
Input Type : Standard
Gate Charge : 100nC
Td (on/off) @ 25°C : 23ns/165ns
Test Condition : 960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) : 70ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
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