產(chǎn)品系列
產(chǎn)品系列
FQI19N20CTU
- Manufacturer : ON Semiconductor
Packaging : Tube
Series : QFET?
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 170 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 53nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1080pF @ 25V
Power Dissipation (Max) : 3.13W (Ta), 139W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I2PAK (TO-262)
Package / Case : TO-262-3 Long Leads, I2Pak, TO-262AA
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