產(chǎn)品系列
產(chǎn)品系列
FQU13N06LTU-WS
- Manufacturer : ON Semiconductor
Packaging : Tube
Alternate Packaging
Series : QFET?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 115 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 6.4nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 25V
Power Dissipation (Max) : 2.5W (Ta), 28W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I-PAK
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
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