產(chǎn)品系列
產(chǎn)品系列
STQ1HNK60R-AP
- Manufacturer : STMicroelectronics
Packaging : Cut Tape (CT)
Alternate Packaging
Series : SuperMESH?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 8.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.7V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 156pF @ 25V
Power Dissipation (Max) : 3W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
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