產(chǎn)品系列
產(chǎn)品系列
FDC636P
- Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Part Status : Obsolete
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 8.5nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 390pF @ 10V
Power Dissipation (Max) : 1.6W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SuperSOT?-6
Package / Case : SOT-23-6 Thin, TSOT-23-6
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